采用射频磁控溅射方法在Pt/Ti/SiO2/Si衬底上制备出(PZT)铁电薄膜,在550℃、600℃、650℃、700℃几个温度下对薄膜进行了快速退火热处理,并在退火处理后用X射线衍射、原子力显微镜和热释电系数测试系统研究了PZT铁电薄膜的薄膜结构、表面形貌及热释电性能.在650℃快速退火后,PZT铁电薄膜已经形成较好的钙钛矿相结构,并获得了较好的热释电性能,热释电系数达到1.5×10-8C·cm-2·k-1.
参考文献
| [1] | Wang Z J et al.Development of Phases and Texture in Sol-gel Derived Lead Zironate Titanate Thin Films Prepared by Three-step Heat-treatment Process[J].Journal of Materials Science,2000,35(23):5915. |
| [2] | Roy R A.Ferroelectric Thin Films Synthesis Past and Present:a Select Review[A].Pittsburg Penn State:Materials Research Society,1990:141-152. |
| [3] | W.Z. Li;J.M. Xue;Z.H. Zhou .0.67Pb(Mg_(1/3)Nb_2/3)O_3-0.33PbTiO_3 thin films derived from RF magnetron sputtering[J].Ceramics International,2004(7):1539-1542. |
| [4] | Vendik OG.;Ter-Martirosayn LT.;Zubko SP. .Experimental evidence of the size effect in thin ferroelectric films[J].Applied physics letters,1998(1):37-39. |
| [5] | Klisarka R D .Effect of Nb Doping on the Microstrucrure of Sol-gel Derived PZT Thin Films[J].Journal of the American Ceramic Society,1995,78(06):1455. |
| [6] | Carim A H et al.Microstructure of Solution Processed Lead Zirconatetitanate(PZT) Thin Films[J].Journal of the American Ceramic Society,1991,74(06):1455. |
| [7] | Reaney I M et al.Use of Transmission Electron Microscopy for The Characterization of Rapid Thermally Annealed Lead Zirconate Titanate Films[J].Journal of the American Ceramic Society,1994,77(07):1209. |
| [8] | R.W.卡恩;P 哈森;E.J.克雷默.半导体工艺[A].,1999:16. |
| [9] | Shaw TM.;McIntyre PC.;Trolier-McKinstry S. .The properties of ferroelectric films at small dimensions [Review][J].Annual review of materials research,2000(0):263-298. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%