对比了CZT晶片经腐蚀与钝化表面处理的PL谱,结果表明NH4F/H2O2作为CZT晶体表面钝化剂,钝化后CZT晶体表面陷阱态密度减小到最低程度,同时减小了与Cd空位复合有关的深能级杂质浓度.用Agilent 4339B高阻仪进行CZT晶片I-V特性测试以及Agilent 4294A高精度阻抗分析仪进行CZT晶片的C-V特性测试,结果表明钝化均能不同程度提高Au/p-CZT接触的势垒高度,减小了漏电流.主要原因是在CZT表面钝化生成的TeO2氧化层增加接触势垒高度,并减小了电荷因隧道效应而穿过氧化层的几率.
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