本文主要讨论了采用改进的超声雾化设备制备了不同衬底温度条件下的ZnO 薄膜.研究了该系统下不同衬底温度对ZnO薄膜电学、结构特性的影响.霍耳测试结果表明:获得了p型ZnO薄膜,其载流子浓度高达1.30×1019cm- 3 .样品的X射线衍射和场发射扫描电子显微镜的测试结果显示,在该系统下450℃时薄膜结晶性能最佳.
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