由于Nd3+离子半径0.112nm和Y3+离子半径0.101nm相差10.9%,使得Nd3+离子非常难于进入YAG晶体中.我们用温度梯度法生长了大尺寸高浓度(2.8at%)的Nd:YAG晶体,同时与用提拉法Nd:GGG晶体进行了比较.分析了高浓度掺杂Nd:GGG和 Nd:YAG晶体浓度猝灭问题.研究了不同浓度掺杂的猝灭效应.在同样的掺杂浓度下,我们发现它们的猝灭程度不同,其原因是两种晶体中ΔE(-)mism和ΔE(+)mism不同.
The ionic radius of Y3+ is 0.101nm and of Nd3+ is 0.112nm, a difference of about 10.9%. Therefore it is difficult to grow highly doped Nd:YAG. In this paper we have grown Large sized highly doped(2.8at.%) Nd:YAG crystals by TGT method. Large sized(φ＞70mm) high quality Nd:GGG crystals have been grown by CZ method for comparison at the same time. The concentration quenching in Nd:GGG crystals with high Nd3+ doping level was demonstrated and studied as well. The comparisons of the concentration quenching effects between the Nd:GGG and Nd:YAG crystals have been listed. The reason why GGG crystal has weaker concentration quenching effect than YAG crystals may be that: YAG crystal has a stronger field strength than that of GGG crystal, which leads to higher values of ΔE(-)mism and ΔE(+)mism in GGG crystal and this causes weaker concentration quenching effect in Nd:GGG crystal.
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