非极性GaN薄膜及其衬底材料

人工晶体学报, 2006, 35(4): 765-771. doi: 10.3969/j.issn.1000-985X.2006.04.022

非极性GaN薄膜及其衬底材料

周健华 ^1, , 周圣明 ^2, , 邹军 ^3, , 黄涛华 ^4, , 徐军 ^5, , 谢自力 ^6, , 韩平 ^7, , 张荣 ^8,

1.中国科学院上海光学精密机械研究所,上海,201800;中国科学院研究生院,北京,100039

2.中国科学院上海光学精密机械研究所,上海,201800

3.中国科学院上海光学精密机械研究所,上海,201800;中国科学院研究生院,北京,100039

4.中国科学院上海光学精密机械研究所,上海,201800;中国科学院研究生院,北京,100039

5.中国科学院上海光学精密机械研究所,上海,201800

6.南京大学物理系,南京,210093

7.南京大学物理系,南京,210093

8.南京大学物理系,南京,210093

基金项目: 国家高技术研究发展计划(863计划)(2004AA311080) 中国科学院"百人计划"

关键词： r面蓝宝石 , γ-LiAlO2 , a面GaN , m面GaN

Nonpolar GaN Films and Their Substrate

本文分析了在不同衬底上生长无极性GaN薄膜的情况,这些衬底主要包括γ-LiAlO2、r面蓝宝石等.通常在蓝宝石上制备的GaN外延膜是沿c轴生长的,而c轴是GaN的极性轴,导致GaN基器件有源层量子阱中出现很强的内建电场,发光效率会因此降低,发展非极性面外延,有望克服这一物理现象,使发光效率提高.

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非极性GaN薄膜及其衬底材料

Nonpolar GaN Films and Their Substrate

参考文献