采用低压金属有机化学气相沉积(LPMOCVD)法,成功地在(0001)晶向的蓝宝石(Al2O3)衬底上制备了高质量的GaN薄膜.并利用X射线衍射(XRD)谱和椭圆偏振光谱(SE)对其结构和光学特性作了表征.XRD谱中,在34.5°和72.9°附近出现了两个尖锐的衍射峰,分析表明这两个衍射峰分别对应纤锌矿(Wurtzite) 结构GaN薄膜的(0002)和(0004)晶向.其中GaN (0002)晶向衍射峰的半高宽(FWHM)很窄,只有0.1°左右,并且GaN(0004)晶向衍射峰强度很强,二者均证实了采用LPMOCVD法制备的GaN薄膜具有高的质量.在介电函数和反射谱中,GaN高的透明性(＜3.44eV)诱导了强的干涉振荡.室温下拟合出的表征带间跃迁的光学带隙约为3.44eV.
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