Cu3N薄膜的制备及其霍尔效应研究

人工晶体学报, 2006, 35(5): 1108-1112. doi: 10.3969/j.issn.1000-985X.2006.05.041

Cu3N薄膜的制备及其霍尔效应研究

王明旭 ^1, , 岳光辉 ^2, , 范晓彦 ^3, , 闫德 ^4, , 闫鹏勋 ^5, , 杨强 ^6,

1.兰州大学等离子体与金属材料研究所,兰州,730000;兰州工业高等专科学校,兰州,730050

2.兰州大学等离子体与金属材料研究所,兰州,730000

3.兰州大学等离子体与金属材料研究所,兰州,730000

4.兰州大学等离子体与金属材料研究所,兰州,730000

5.兰州大学等离子体与金属材料研究所,兰州,730000

6.兰州大学等离子体与金属材料研究所,兰州,730000

基金项目: 甘肃省自然科学基金(ZS021-A25-022-C)

关键词：氮化铜薄膜 , XRD , SEM , AFM , 霍尔效应

Investigations on Preparation and the Hall Effect of the Cu3N Thin Films

采用反应射频磁控溅射的方法在纯氮气气氛下、氮气流量为12sccm、衬底温度为100℃的条件下,在玻璃基底上成功制备了氮化铜(Cu3N)薄膜.XRD显示薄膜择优[100]晶向生长.用扫描电子显微镜(SEM)和原子力显微镜(AFM)观察了样品的表面形貌,发现样品表面平整、结构紧密.用四探针法检测了薄膜的霍尔特性,发现随温度的降低薄膜的霍尔系数、霍尔电阻率均增加.霍尔迁移率在高温范围也呈降低的趋势,但是变化的范围比较小,在低温范围又有所增加.随温度的降低薄膜的载流子浓度降低.我们还通过变温的霍尔系数估算了氮化铜薄膜的禁带宽度约为1.35eV.

参考文献

[1]	Hahn U.;Weber W. .ELECTRONIC STRUCTURE AND CHEMICAL-BONDING MECHANISM OF CU3N, CU3NPD, AND RELATED CU(I) COMPOUNDS[J].Physical Review.B.Condensed Matter,1996(19):12684-12693.
[2]	Terao N;Acad C R .[J].Science Paris Ser B,1973,27:7595-7598.
[3]	Terada S;Tanaka H;Kubota K .Heteroepitaxial Growth of Cu3N Thin Films[J].Journal of Crystal Growth,1989,94:567-568.
[4]	Blucher J;Bang K;Glessen B C .[J].Materials Science and Engineering A,1989,117:L1-L3.
[5]	Maruyama T;Morishita T .Copper Nitride and Tin Nitride Thin Films for Write-once Optical Recording Media[J].Applied Physics Letters,1996,69(07):890-891.
[6]	Z. Q. Liu;W. J. Wang;T. M. Wang;S. Chao;S. K. Zheng .Thermal stability of copper nitride films prepared by rf magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):55-59.
[7]	Asano M;Umeda K;Tasaki A .Cu3N Thin Film for a New Light Recording Media[J].Japanese Journal of Applied Physics,1990,29(10):1985-1986.
[8]	Nosaka T;Yoshitake M;Okamotoa A et al.Copper Nitride Thin Flms Prepared by Reactive Radio-frequency Magnetron Sputtering[J].Thin Solid Films,1999,348:8-13.
[9]	Yue G H;Yan P X .The Physical Properties about the Prepared Cu3N Thin Films[J].Journal of the Synthetic Crystals,2005,34(01):149-153.
[10]	岳光辉,闫鹏勋,刘金良.多晶氮化铜薄膜制备及性能研究[J].人工晶体学报,2005(02):344-348.
[11]	Yue GH;Yan PX;Wang J .Study on the preparation and properties of copper nitride thin films[J].Journal of Crystal Growth,2005(3/4):464-468.
[12]	Kim K J;Kim J H;Kang J H .Structural and Optical Characterization of Cu3N Flms Prepared By Reactive RF Magnetron Sputtering[J].Journal of Crystal Growth,2001,222:767-772.
[13]	Yue G H;Liu J Z et al.Hall Effect of the Copper Nitride Thin Films[J].Physica Status Solidi A,2005,202(10):1987-1993.
[14]	Ghosh S.;Choudhary D.;Avasthi DK.;Ganesan V.;Shah P.;Gupta A.;Singh F. .Effect of substrate temperature on the physical properties of copper nitride films by r.f. reactive sputtering[J].Surface & Coatings Technology,2001(0):1034-1039.
[15]	Dao-Yuan Wang;Norio Nakamine;Yasunori Hayashi .Properties of various sputter-deposited Cu-N thin films[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1998(4):2084-2092.
[16]	Fendrych F;Soukup L;Jastrab k L et al.Cu3N Films Prepared by the Low-pressure R.F Supersonic Plasma Jet Reactor:Structure and Optical Properties[J].Diamond and Related Materials,1999,8:1715-1719.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网