采用直流双靶磁控溅射聚焦共沉积技术在Fe衬底上高速率生长AlN薄膜,结果表明,双靶共沉积技术有效地提高了AlN薄膜生长速率,相同工作气压或低N2浓度时双靶磁控溅射沉积速率约为单靶沉积速率的2倍;随着溅射系统内工作气压或N2浓度的升高,薄膜生长速率不断减小;薄膜择优取向与薄膜生长速率相互影响,随着工作气压的升高,(100)晶面的择优生长减缓了薄膜生长速率的降低,随着N2浓度的升高,(002)晶面的择优生长加剧了薄膜生长速率的降低,而相对较低的溅射沉积速率有利于(002)晶面择优取向生长.
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