采用溶胶凝胶法在LiAlO2(302)衬底上制备了ZnO薄膜.用X射线衍射(XRD)和扫描电镜(SEM)对样品的结构和形貌进行了表征.XRD结果表明,随着热处理温度的升高(350℃、450℃、550℃、600℃、800℃),所得到的薄膜分别为单相ZnAl2O4(350℃),ZnAl2O4和ZnO的混合相(450℃)以及单相的ZnO(550℃、600℃、800℃),并且ZnO薄膜c轴择优取向的生长趋势随温度升高相应明显.SEM图像显示,随着热处理温度的升高,ZnO薄膜的粒径相应变大.
参考文献
| [1] | Tang ZK.;Yu P.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Wong GKL. .Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Applied physics letters,1998(25):3270-3272. |
| [2] | Kim K K;Kim H S;Hwang D K et al.Realization of p-type ZnO Thin Film via Phosphorus Doping and Thermal Activation of the Dopant[J].Applied Physics Letters,2003,83:63. |
| [3] | Lee CH.;Song JS.;Lim KS. .HIGHLY TEXTURED ZNO THIN FILMS DOPED WITH INDIUM PREPARED BY THE PYROSOL METHOD[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1996(1):37-45. |
| [4] | Kamalasanan M N;Chandra S .Sol-gel Synthesis of ZnO Thin Films[J].Thin Solid Films,1996,288:112. |
| [5] | Liu Z W;Sun C W;Gu J F et al.Epitaxial Relationship of ZnO Film with Si (001) Substrate and Its Effect on Growth and Morphology[J].Applied Physics Letters,2006,88:251911. |
| [6] | Narayan J.;Sharma AK.;Oktyabrsky S.;Dovidenko K. .Defects and interfaces in epitaxial ZnO/alpha-Al2O3 and AlN/ZnO/alpha-Al2O3, heterostructures[J].Journal of Applied Physics,1998(5):2597-2601. |
| [7] | Ryu YR.;Wrobel JM.;Jeong HM.;Miceli PF.;White HW.;Zhu S. .Comparative study of textured and epitaxial ZnO films[J].Journal of Crystal Growth,2000(1/4):326-329. |
| [8] | Ko HJ.;Zhu Z.;Hanada T.;Yao T.;Chen YF. .Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBE[J].Journal of Crystal Growth,2000(1/4):389-394. |
| [9] | Lim S H;Shindo D .Defects and Interfaces in an Epitaxial ZnO/LiTaO3 Heterostructure[J].Journal of Applied Physics,2000,88:5107. |
| [10] | Ohtomo A;Tamura K;Saikusa K .Single Crystalline ZnO Films Grown on Lattice-matched ScAlMgO4(0001) Substrates[J].Applied Physics Letters,1999,75:2635. |
| [11] | Ying M J;Du X L;Liu Y Z et al.Controlled Growth of O-polar ZnO Epitaxial Film by Oxygen Radical Preconditioning of Sapphire Substrate[J].Applied Physics Letters,2005,87:202107. |
| [12] | Ohkubo I.;Hirose C.;Tamura K.;Nishii J.;Saito H.;Koinuma H.;Ahemt P. Chikyow T.;Ishii T.;Miyazawa S.;Segawa Y.;Fukumura T.;Kawasaki M. .Heteroepitaxial growth of beta-LiGaO2 thin films on ZnO[J].Journal of Applied Physics,2002(9):5587-5589. |
| [13] | Waltereit P;Brandt O;Trampert A et al.Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes[J].Nature,2000,406:865. |
| [14] | Waltereit P;Brandt O;Trampert A et al.M-plane GaN Grown on γ-LiAlO2 (100):Nitride Semiconductors Free of Internal Electrostatic Fields[J].Journal of Crystal Growth,2001,437:227. |
| [15] | Reed MD;Kryliouk OM;Mastro MA;Anderson TJ .Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates[J].Journal of Crystal Growth,2005(1/2):14-20. |
| [16] | 陈晓清,谢自力,张荣,修向前,顾书林,韩平,施毅,郑有炓.退火温度对纳米ZnO薄膜结构与发光特性的影响[J].微纳电子技术,2004(11):24-27. |
| [17] | 毕朝霞,张荣,李卫平,王栩生,顾书林,沈波,施毅,刘治国,郑有炓.Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films[J].中国科学G辑(英文版),2003(01):41-46. |
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