用电化学方法对多孔硅薄膜进行了镁离子的化学掺杂.用荧光分光光度计分析了样品的光致发光特性,发现镁掺杂增强了多孔硅的蓝光发射,当镁离子浓度增大到0.002mol/L时,可使蓝光强度达到多孔硅红光强度的一半.红外吸收谱表明,掺镁多孔硅的表面形成较完整的Si-O-Si网络结构,分析结果认为,多孔硅的蓝光光激发主要发生在多孔硅的纳米硅粒中,光发射主要发生在多孔硅中包裹纳米硅SiOx层中的发光中心上,对实验结果进行了合理的解释.
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