通过采用不同类型的无机多孔膜作为模板以及恒电位模板电沉积法在一层厚度为300nm的碳膜上制备出一维金亚微米棒、纳米线及其阵列,并利用扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、能量分散谱(EDS)表征了该一维金亚微米棒、纳米线阵列的化学组成、结构和形貌.研究结果表明,采用多孔三氧化二铝膜作为模板,可以得到长度为5μm的一维金亚微米棒(直径200nm)阵列;采用无机复合介孔膜为模板,则得到一维金纳米线(3~4nm)阵列,并通过控制沉积时间,可以调节纳米线的长度(400nm~3μm).
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