采用等离子体化学气相沉积(PCVD)法，在0．1～0．3mm厚的普通硅钢片表面涂硅，再进行短时间高温扩散，使硅钢片的含Si量增加到6．5％，铁损P10/50比原来钢片降低50％，其他磁性能也大有改善。试验结果表明，在460～600℃涂硅，其他条件不变，涂硅速度随温度升高而降低，并对等离子体反应的动力学和热力学进行了研究。
Silicon depositing was carried out on 0. 1 ～ 0. 3 mm thick silicon steel sheet by plasma chemical vapor depositing process. The surface silicon content of the sheet could reach 6. 5 % Si after high temperature diffusion treatment and iron loss was 50% smaller than that of the non-treated silicon steel sheet. It was shown that the silicon deposition rate decreased with the temperature increasing. Accordingly the plasma reaction dynamics was comprehensively discussed by the authors.
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