研究了镀膜光纤传感器ZnO压电薄膜电沉积的晶体结构的影响因素及沉积机理.试验表明,利用Zn(NO3)2单盐水溶液体系可在铜基上进行阴极电沉积直接得到氧化锌膜.试验研究了电沉积过程中电流密度、沉积温度、Zn2+浓度、pH值及沉积时间对氧化锌膜结构的影响,提出了一套稳定、实用、经济的电沉积工艺参数为:电流密度4.5～7.0 mA/cm2,温度50～60 ℃,反应时间10～20 min,Zn2+浓度0.10～0.20 mol/L,pH值2.0～3.0.通过循环伏安曲线对沉积反应进行了分析,考察了结晶组成和晶体结构及晶粒尺寸.研究表明,搅拌对沉积影响不大.在最佳工艺条件下沉积得到的ZnO薄膜厚度为2.8～3.2 μm,薄膜晶粒尺寸为0.529 40 nm.
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