强流脉冲离子束(HIPIB)方法以新的成膜机理通过高强度(约108W/cm2)，脉冲(约70ns)离子束照射到ITO陶瓷靶材上产生的高密度、高温二次等离子体快速地沉积到室温玻璃基片上成功地制得ITO薄膜。经一次脉冲发射即可制得约65nm厚的膜。通过原子力显微镜(AFM)图象分析膜的表面形貌，膜的平整性与膜厚有直接关系，一次沉积的膜的平整度良好。
ITO films were successfully deposited by high-intensity,high-temperature plasma produced by the irradiation of an intense(～108W/cm2), pulsed(70ns)ion beam onto an ITO ceramic target at a uniquely quick instantaneous deposition rate which is several orders of magnitude higher than that of any other conventional deposition technique.The film thickness of about 65nm is obtained in one shot by pulse.The analysis on the nanostructure of the films was made by the atomic force microscopy,from which the effect of the thickness on the flatness of the films was found.The films produced by one shot show smooth surfaces.
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