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以SnCl4*5H2O和SbCl3为原料,采用共沉淀法制得了粒径为几个到几十个纳米的SnO2超细粉.运用差示扫描量热法-失重分析(DSC-TG)、X-射线衍射(XRD)、透射电镜(TEM)等观测手段对微粉末进行了表征;并对其晶粒生长过程进行了研究.实验表明,粉末为具有四方相金红石结构的掺Sb二氧化锡多晶不规则椭球粒;煅烧温度<600℃时,样品处于结构调整阶段,逐步成核并缓慢生长,晶粒成核及生长活化能为4.25kJ*mol-1;煅烧温度>600℃时,晶化程度很高,晶粒较快生长,晶粒生长活化能为37.08kJ*mol-1.

参考文献

[1] Orel B;i-tangar U L;Crnjak-Orel Z et al.Structural and FTIR spectroscopic studies of gel-xerogel-oxide transitions of SnO2 and SnO2:Sb powders and dip-coated films prepared via inorganic sol-gel route[J].Journal of Non-Crystalline Solids,1994,167:272-288.
[2] Sager W;Hans-Friedrich E;Sun W .Precipitation of nanometre-sized uniform ceramic particles in emulsions[J].Colloids and Surfaces A:Physicochemical and Engineering Aspects,1993,79:199-216.
[3] Goebbert C;Aegerter M A;Burgard D.Ultrafiltration conducting membranes and coating from redispcrsable nanoscaled crystalline SnO2:Sb particles[J].Journal of Materials Chemistry,1999(09):253-258.
[4] Pütz J;Ganz D;Gasparro G et al.Influence of the heating rate on the microstructure and on macroscopic properties of sol-gel SnO2:Sb coating[J].Journal of Sol-Gel Science and Technology,1998,13:789-792.
[5] Vincent C A;Weston D G C .Preparation and properties of semiconducting polycrystalline tin oxide.Solid state science and technology[J].Journal of the Electrochemical Society,1972,119(04):518-521.
[6] 薄占满 .掺Sb二氧化锡半导体导电机理的实验探索[J].无机材料学报,1990,5(04):324-329.
[7] 罗文秀;任鹏程;谭忠恪 .汞灯辅助MOCVD SnO2薄层晶体的结构与透明导电性研究[J].功能材料,1993,24(02):129-133.
[8] 潘庆谊;徐甲强;董晓霞 等.纳米级SnO2的合成及其气敏性能研究[J].华东理工大学学报(自然科学版),1998,24(04):431-435.
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