以HfOCl2·8H2O为原料,采用化学沉淀法在不同的pH值下制备HfO2纳米粉体,并对制备的纳米粉体采用XRD,DSC-TG,TEM,BET等方法进行表征.研究了pH值对粉体比表面积、粒径的影响.结果表明:本方法制备的纳米粉体呈简单正交晶型,平均粒径为10m,粒度分布窄,随着pH值的增加,粉体有比表面积增大,平均粒径减小的趋势,但变化幅度较小.
参考文献
[1] | Chin T H .High dielectric constant of RF-sputtered HfO2 thin films[J].Japanese Journal of Applied Physics,1992,31:2501. |
[2] | Choi KJ.;Shin WC.;Yoon SG. .Effect of annealing conditions on a hafnium oxide reinforced SiO2 gate dielectric deposited by plasma-enhanced metallorganic CVD[J].Journal of the Electrochemical Society,2002(3):F18-F21. |
[3] | Toraya H;Yoshimura M;Somiya S .Hdrothermal oxidation of Hf metal chips in the preparation of monoclinic HfO2 powders[J].Journal of the American Ceramic Society,1983,66(02):148-150. |
[4] | Garvie R C .The occurrence of metastable tetragonal zirconia as a crystallite size effect[J].Journal of Physical Chemistry,1965,69(04):1238-1243. |
[5] | Bleier A;Weamoreland C G .Effects of pH and particle size on the processing of and the development of microstructure in alumina-zirconia composites[J].Journal of the American Ceramic Society,1991,74(12):3100-3111. |
[6] | 周祖康.胶体化学基础[M].北京:北京大学出版社,1987 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%