以V2O5粉末为原料,采用真空蒸发结合真空热处理方法制备VOx薄膜,运用XRD(X射线衍射)和SEM(扫描电子显微镜)技术分析了基片材料、基片温度、真空热处理工艺对氧化钒薄膜结晶状态、物相组成和表面形貌的影响,在基片温度为200℃和400℃时所沉积的氧化钒薄膜在室温附近的电阻温度系数(TCR)分别达到-3%,并发现随着基片温度的升高,薄膜在室温附近的电阻率降低,TCR绝对值减小.
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