陶瓷电容器,尤其是边界层陶瓷电容器由于具有许多优良的性能,而越来越受到人们的重视.通常用于陶瓷电容器的材料是具有弛豫铁电性能的钛酸盐类材料.本文则介绍了将SiC材料用于制备陶瓷电容器,结果发现,电容器的介电常数高达2 910 000,远远高于传统材料;而同时,其介质损耗也非常高.在此,对降低损耗的工艺过程进行了探讨.
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