采用APCVD工艺用硅烷和乙烯为原料在620℃沉积硅薄膜.用AFM观察薄膜表面形貌,用SEM扫描截面测量薄膜厚度.FTIR光谱表明薄膜中存在Si-C.研究了C2H4/SiH4摩尔比对膜厚的影响,随着C2H4/SiH4的增大,薄膜的沉积速率降低,表明乙烯掺杂会抑制薄膜生长,同时乙烯的加入减弱了颗粒的异常长大.
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