用直流磁控溅射方法在硅衬底上制备氮化铝薄膜.X射线衍射仪和X射线光电子能谱仪分析了薄膜的结构和成分;椭圆偏振仪测量并拟合获得AIN薄膜在250~1000 nm波长范围内的折射率和消光系数曲线;利用大荷载划痕仪的声发射谱检测方法并结合不同压力下的划痕显微形貌观察得到薄膜临界载荷(结合力)Lc为29.45N.
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