采用坩埚法研究了Si3N4-SiC陶瓷材料在空气气氛中的抗铜侵蚀性能,侵蚀温度为1130 ℃,时间为25 h;选用铜熔炼用Si3N4-SiC陶瓷塞棒在工厂实际生产环境中进行氮气气氛中的抗铜侵蚀试验,试验温度为1130～1150 ℃,时间是400 h.试验完成后,用XRD分析坩埚试样侵蚀层的相组成,用扫描电子显微镜观察坩埚试样侵蚀层的显微结构.结果表明:在氮气气氛中,铜熔体含氧量低,Si3N4-SiC材料具有优异的抗侵蚀性能.空气气氛中,铜熔体含氧量高,Si3N4-SiC材料的抗侵蚀性能差.这是由于铜熔体中存在大量的Cu2O,促使Si3N4快速氧化,生成SiO2、N2和Cu,SiO2熔入铜熔体中所致.
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