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采用粒度14μm的磨料级碳化硅,粒度10 μm的工业级金属铝粉和粒度5 μm的工业级炭黑粉为原料,按SiC:Al:C质量比为22:59:19配料制成试样,在氩气保护下,分别在1200℃8 h、1600℃2 h和1650℃2 h烧成,研究了通过固相反应合成Al4SiC4材料的条件和动力学过程.通过X射线衍射仪进行物相分析,扫描电子显微镜和透射电子显微镜的形貌分析以及能谱分析确定成分.结果表明:反应体系在1200℃以下,铝和炭黑反应首先生成中间相Al4C3;从1200℃开始通过SiC+Al4C3=Al4SiC4固相反应生成Al4SiC4;当合成温度达到1650℃时,获得Al4SiC4材料;制备的Al4SiC4材料的颗粒均匀,尺寸在几百纳米到几微米之间.

参考文献

[1] Inoue Z;Inomata Y;Tanaka H .X-ray crystallographic data on aluminum silicon carbide,α-Al4 SiC4 and Al4Si2C5[J].Journal of Materials Science,1980,15(09):575-580.
[2] Yokokawa H;Fujita M;Ujiie S et al.Phase relations associated with the aluminum blast furnace :aluminum oxycarbide melts and Al-C-X ( X=Fe,Si) liquid alloys[J].Metallurgical and Materials Transactions B:Process Metallurgy and Materials Processing Science,1987,18(06):433-44.
[3] Itatani K.;Takahashi F.;Aizawa M.;Okada I.;Davies IJ.;Suemasu H. Nozue A. .Densification and microstructural developments during the sintering of aluminium silicon carbide[J].Journal of Materials Science,2002(2):335-342.
[4] Osamu Yamamoto;Motoko Ohtani;Tadashi Sasamoto .Preparation and oxidation of Al_4SiC_4[J].Journal of Materials Research,2002(4):774-778.
[5] Inoue K;Yamaguchi A;Hashimoto S .Fabrication and resistance of Al4SiC4 body[J].Journal of the Ceramic Society of Japan,2002,110(11):1010-1015.
[6] Koji Inoue;Akira Yamaguchi .Synthesis of Al_4SiC_4[J].Journal of the American Ceramic Society,2003(6):1028-1030.
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