介绍了c-BN的优异特性及应用前景.评述了c-BN膜的几种低压物理气相沉积(PVD)和低压化学气相沉积(CVD)制备方法,分析其成膜特点及对c-BN形成有显著影响的工艺参数.介绍了当前c-BN膜研究取得的成果,对如何提高成膜质量提出了自己的一些看法.
参考文献
| [1] | 田民波;刘德令.薄膜科学与技术手册[M].北京:化学工业出版社,1991:860. |
| [2] | Habig K H .Fundamentals of the tribological behaviour of diamond,diamond like carbon and cubic boron nitride coatings[J].Surface and Coatings Technology,1995,76,77:540. |
| [3] | Mishima O;Tanaka J;Yamaoka S et al.High-temperature Cubic Boron Nitride PN Junction Diode Made at High Pressure[J].Science,1987,238(4828):181. |
| [4] | Mishima O;Erak Tanaka J et al.Ultraviolet light-emitting diode of a cubic boron nitride pn junction made at high pressure[J].Applied Physics Letters,1988,53(11):962. |
| [5] | Murakawa M;Watanabe S .The synthesis of cubic BN films using a hot cathode plasma discharge in a parallel magentic field[J].Surface and Coatings Technology,1990,43,44:128. |
| [6] | Murakawa M;Watanabe S;Miyake S .Manufacture of cBN films with improved adhension[J].Materials Science and Engineering,1991,A140:753. |
| [7] | Inagawa K;Watanabe K;Ohsone H .Prepapation of cubic boron nitride film by activated reactive evaporation with a gas activation nozzle[J].Journal of Vacuum Science and Technology,1987,A5(04):2696. |
| [8] | Watanabe S;Miyake S;Murakawa M .Friction behavior of amorphous-BN-cubic-BN dual-layered film[J].Surface and Coatings Technology,1995,76,77:600. |
| [9] | Mieno M;Yoshida T .Preparation of cubic boron nitride films by RF sputtering[J].Japanese Journal of Applied Physics,1990,29(07):L1175. |
| [10] | Schutze A;Bewilogua K;Luthje H .Cubic boron nitride films prepared by reactive r.f.and d.c.sputtering from different boron containing targets[J].Surface and Coatings Technology,1995,74,75:717. |
| [11] | Shapoval S Y;Petrashov T T;Popov O A et al.Cubic boron nitride films deposited by election cyclotron resonance plasma[J].Applied Physics Letters,1990,57(18):1885. |
| [12] | Yokoyama H;Okamoto M;Osaka Y .Effects of negative self-bias on the growth of cubic boron nitride prepared by plasma chemical vapor deposition[J].Japanese Journal of Applied Physics,1991,30:344. |
| [13] | Goto T;Tanaka T;Masumoto H et al.Preparation of tur bostratic and cubic boron-nitride films by electron-cyclotron-resonance,plasma-assisted,chemical vapor depo sition[J].Journal of Materials Science:Materials in Electronics,1994,5:324. |
| [14] | Saitoh H;Hirose T;Matsul H et al.Synthesis of BN films by the plasma CVD with various solids[J].Surface and Coatings Technology,1989,39,40:265. |
| [15] | Yukio I;Hidetoshi S;Yoshihiko H .Synthesis of cubic BN from the gas phase by a new plasma chemical vapor deposition method using RF waves and a tungsten filament[J].Surface and Coatings Technology,1990,43,44:116. |
| [16] | 姬荣斌;王万录;廖克俊 等.热丝辅助等离子体化学气相法生长c-BN薄膜[J].硅酸盐学报,1994,22(02):162. |
| [17] | 王宏;廖克俊;王万录 .热等丝辅助射频等离子体CVD法生长立方氮化硼薄膜的研究[J].薄膜科学与技术,1995,8(02):91. |
| [18] | Zhang F;Guo Y;Song Z et al.Deposition of highguality cubic boron nitride films on nickel substrates[J].Applied Physics Letters,1994,65(08):971. |
| [19] | Song Z;Zhang F;Guo Y et al.Textured growth of cubic boron nitride film on nickel substrates[J].Applied Physics Letters,1994,65(21):2669. |
| [20] | Sokolowski M;Sokolowska A;Michalski A et al.The de position of thin films of materials with high melting points on substrates at room temperature using the pulse plasma method[J].Thin Solid Films,1991,80:249. |
| [21] | Szmidt J;Jakubowski A .Basic properties of metal/insula tor/semiconductor structures containing borazone and dia mond layers produced by the reactive pulse plasma method[J].Thin Solid Films,1983,110:7. |
| [22] | 闫鹏勋,杨思泽,李兵,陈熙琛.立方氮化硼薄膜的脉冲等离子体室温生长[J].科学通报,1995(05):414-416. |
| [23] | 廖克俊,王万录.高速率生长c-BN薄膜[J].科学通报,1995(13):1184-1186. |
| [24] | 陈光华,郭永平,张仿清,宋志忠.立方氮化硼薄膜的织构生长[J].科学通报,1995(06):499-501. |
| [25] | 镍衬底上立方氮化硼薄膜的大面积生长[J].兰州大学学报,1999(01):67. |
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