采用乙醛酸代替有害的化学药品甲醛作为还原剂的化学镀技术, 在TiN 阻挡层实现了化学镀铜.研究了不用贵重金属钯催化,而是采用NH4F酸性化学镀方法在TiN/Ti/SiO2/Si基板上沉积一层铜种子层,然后在此铜种子层上采用乙醛酸化学镀方法沉积铜膜的方法.用SEM观察镀层形貌,XRD表征镀层结晶状态,证实此方法能够制备出超大规模集成电路铜互连线.试验分析并探讨了pH值、铜离子浓度、乙醛酸浓度、EDTA浓度、联吡啶浓度、镀液温度对化学镀速度和镀铜层效果的影响,得到了制备超大规模集成电路铜互连线的最优化学镀溶液成分.
参考文献
| [1] | 辜敏,杨防祖,黄令,姚士冰,周绍民.超大规模集成电路中的电沉积铜[J].电镀与精饰,2004(01):12-17. |
| [2] | Andricacos PC.;Dukovic JO.;Horkans J.;Deligianni H.;Uzoh C. .Damascene copper electroplating for chip interconnections[J].IBM journal of research and development,1998(5):567-574. |
| [3] | Jun-Ying Zhang;I. W. Boyd .Investigations of photo-induced decomposition of palladium acetate for electroless copper plating[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):234-238. |
| [4] | Lee MK.;Wang HD.;Wang JJ. .DEPOSITION OF COPPER FILMS ON SILICON FROM CUPRIC SULFATE AND HYDROFLUORIC ACID[J].Journal of the Electrochemical Society,1997(5):1777-1780. |
| [5] | Desilva MJ.;Shachamdiamand Y. .A NOVEL SEED LAYER SCHEME TO PROTECT CATALYTIC SURFACES FOR ELECTROLESS DEPOSITION[J].Journal of the Electrochemical Society,1996(11):3512-3516. |
| [6] | Braud F.;Palleau J.;Mermet JL.;Mouche MJ.;Torres J. .TI-DIFFUSION BARRIER IN CU-BASED METALLIZATION[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1995(1/4):251-256. |
| [7] | 熊海平,萧以德,伍建华,付志勇.化学镀铜的进展[J].表面技术,2002(06):5-6,11. |
| [8] | 白拴堂,王玉娉.化学镀铜新工艺及其在电子工业中的应用[J].表面技术,2000(06):41-42,46. |
| [9] | 唐电,魏喆良,邵艳群,孙荆华,LEE Ye-kun,游少鑫,李敬业.难镀基材上乙醛酸作为还原剂的化学镀铜[J].中国有色金属学报,2003(05):1252-1256. |
| [10] | Zhong S;Yang ZG;Cai J;He HJ;Wen JS;Liu C .Electroless Cu deposition on a TiN barrier in CuSO4-HF solution[J].Journal of the Electrochemical Society,2005(7):C466-C473. |
| [11] | Sheng Zhong;Zhi-Gang Yang;Jian Cai .Behavior of Electroless Cu Deposition in CuSO_4-HF Solution[J].Journal of the Electrochemical Society,2005(3):C143-C148. |
| [12] | Ono H;Nakano T;Ohta T .Diffusion barrier effects of transition-metals for Cu/M/Si multilayers (M = Cr,Ti,Nb,Mo,Ta,W)[J].Applied Physics Letters,1994,64:1511-1513. |
| [13] | Chin B;Ding P;Sun B et al.S.Edelstein,Barrier and seed layers for damascene copper metallization[J].SOLID STATE TECHNOLOGY,1998,7:141-144. |
| [14] | Tseng W T;Lo C H;Lee S C .Electroless deposition of Cu thin films with CuCl2-HNO3 based chemistry Ⅰ--Chemical formulation and reaction mechanisms[J].Journal of the Electrochemical Society,2001,148:C327-C332. |
| [15] | Tseng W T;Lo C H;Lee S C .Electroless deposition of Cu thin films with CuCl2-HNO3 based chemistry Ⅱ--Kinetics and microstructure[J].Journal of the Electrochemical Society,2001,148:C333-C338. |
| [16] | Honma H;Kobayashi T .Electroless copper deposition process using glyoxylic acid as a reducing agent[J].Journal of the Electrochemical Society,1994,141(03):730-733. |
| [17] | Yosi Y. Shacham-Diamand .Electroless Copper Deposition Using Glyoxylic Acid as Reducing Agent for Ultralarge Scale Integration Metallization[J].Electrochemical and solid-state letters,2000(6):279-282. |
| [18] | 毛卫民,张弘.大规模集成电路导电薄膜的织构效应[J].北京科技大学学报,2000(06):539-542. |
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