就目前CMP建模当中没有考虑到芯片表面的薄膜氧化所需时间对模型建立所产生的影响,以至最后模型的预测结果与试验结果相差甚多的问题进行探讨.在基于理论分析的基础上提出以椭偏仪法测定出芯片表面薄膜生成厚度与浸泡时间精确的对应关系.试验结果表明:在模型建立时,芯片表面薄膜厚度的生成时间对模型的建立有着重要影响,精确测定其时间对应关系将有助于使得所建模型的预测结果与试验结果进一步吻合.
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