利用非平衡磁控溅射(UBMS)技术在硅基片上制备了无氢碳膜,并采用Raman光谱、X射线衍射、傅立叶变换光谱等手段对不同靶电流下沉积的薄膜的微观结构、沉积速率、粗糙度、表面接触角及红外透过率进行了研究.试验结果表明:随着靶电流的增大,薄膜的沉积速率增大,薄膜中sp3键含量增加,薄膜表面接触角增大,红外透过率增大;而薄膜的粗糙度随靶电流增加而减小.靶电流是影响非平衡磁控溅射制备无氢碳膜结构与性能的1个主要因素.
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