利用微波等离子体化学气相沉积法(MPCVD)在钛基底上制备了掺硼金刚石(BDD)薄膜.研究了硼源浓度对BDD薄膜生长的影响.分别采用扫描电子显微镜,拉曼光谱,X射线衍射技术对薄膜的表面形貌、残余应力、择优取向及TiC含量进行了分析.结果表明,硼源浓度升高对金刚石薄膜(111)织构生长有促进作用;随着掺硼浓度的增加,TiC含量和晶粒尺寸皆减小,同时薄膜的张应力增大,缓解薄膜自身在制备过程中形成的压应力,从而更大程度上提高薄膜附着力.
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