基于溅射沉积和薄膜生长原理,系统综述分析溅射功率、沉积气压、衬底温度、衬底的选择等对硅薄膜晶化过程的客观影响规律,旨在为学术界和产业界基于溅射原理研发晶态硅薄膜、生产高效率硅基组件提供实验支持与理论参考.
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