基于铝诱导晶化方法,通过直流磁控溅射离子镀技术利用纯Al、纯Si和Al(Ce)靶材,制备了Al-Si和Al(Ce)-Si薄膜.采用真空退火炉和X射线衍射仪在不同温度下,对样品进行了退火实验并分析了Al-Si和Al(Ce)-Si薄膜的晶化和生长过程；结合Si薄膜的生长机理,研究了Al和稀土Ce在对Si薄膜退火晶化过程中的影响.结果表明:在Al(Ce)诱导Si薄膜晶化过程中,Ce可促进Si原子沿Si(111)晶面生长；500℃退火后,与Al-Si薄膜相比Al(Ce)-Si薄膜中Si的平均晶粒尺寸显著减小；Ce的存在细化了Al晶粒尺寸,且在扩散进程中使得Al原子弥散分布于Si原子所在微区,是Si晶粒平均晶粒尺寸减小的主要原因.
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