利用铜代替铝作为超大规模集成电路的互连接线,代表了半导体工业的重要转变.铜电沉积是互连"大马士革"(Damascene)工艺中最为重要的技术之一.综述了铜在芯片微刻槽中电沉积填充的过程、机理,并着重讨论了实现无裂缝和无空洞理想填充的主要因素-镀液的组成和添加剂的影响.
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