印制线路板微孔金属化的关键在于在高厚径比的微孔中形成无空洞、无接缝、均匀的铜沉积层.综述了目前微孔填充技术的发展现状,对电镀过程中采用的电流密度、搅拌因素和电流波形等进行了探讨,重点讨论了添加剂对填孔效果的影响及其作用机理.
参考文献
| [1] | 金鸿;陈森.印制电路技术[M].北京:化学工业出版社,2003:1-3. |
| [2] | 刘小兵,骆玉祥.脉冲电镀在微盲孔填孔上的应用[J].印制电路信息,2004(07):42-45,59. |
| [3] | Wei-Ping Dow;Her-Shu Huang .Roles of Chloride Ion in Microvia Filling by Copper Electrodeposition[J].Journal of the Electrochemical Society,2005(2):C67-C76. |
| [4] | Takeshi Kobayashi;Junichi Kawasaki;Kuniaki Mihara;Hideo Honma .Via-filling using electroplating for build-up PCBs[J].Electrochimica Acta,2001(1/2):85-89. |
| [5] | Andricacos PC.;Dukovic JO.;Horkans J.;Deligianni H.;Uzoh C. .Damascene copper electroplating for chip interconnections[J].IBM journal of research and development,1998(5):567-574. |
| [6] | Jordan K G;Tobias C W .The effect of inhibitor transport on levelling in electrodeposition[J].Journal of the Electrochemical Society,1991,138:1251-1258. |
| [7] | T. P. Moffat;J. E. Bonevich .Superconformal Electrodeposition of Copper in 500-90 nm Features[J].Journal of the Electrochemical Society,2000(12):4524-4535. |
| [8] | Moffat T P;Wheeler D;Huber W H et al.Superconformal electrodeposition of copper[J].Electrochem and Solid-state Lett,2001,4(04):C26-C29. |
| [9] | West A C;Mayer S;Reid J .A superfilling model that predicts bump formation[J].Electrochem and Solid-state Lett,2001,4(07):C50-C53. |
| [10] | S. Soukane;S. Sen;T. S. Cale .Feature Superfilling in Copper Electrochemical Deposition[J].Journal of the Electrochemical Society,2002(1):C74-C81. |
| [11] | Yeon Ho Im;Max O. Bloomfield;Suchira Sen .Modeling Pattern Density Dependent Bump Formation in Copper Electrochemical Deposition[J].Electrochemical and solid-state letters,2003(3):C42-C46. |
| [12] | Mark Lefebvre;George Allardyce;Masaru Seita;Hideki Tsuchida;Masaru Kusaka;Shinjiro Hayashi .Copper electroplating technology for microvia filling[J].Circuit world,2003(2):9-14. |
| [13] | Jian-Jun Sun;Kazuo Kondo;Takuji Okamura .High-Aspect-Ratio Copper Via Filling Used for Three-Dimensional Chip Stacking[J].Journal of the Electrochemical Society,2003(6):G355-G358. |
| [14] | 陈文录,丁万春,穆敦发.酸性脉冲电镀铜中脉冲参数的作用研究[J].印制电路信息,2003(03):59-65. |
| [15] | 向国朴.脉冲电镀的理论与应用[M].天津:天津科学技术出版社,1998:1. |
| [16] | 陈文录,丁万春,李宝环.脉冲电镀添加剂和氯离子对铜电极过程作用的电化学研究[J].印制电路信息,2003(04):39-48. |
| [17] | 叶成镜;蓝国兴 .电镀铜填孔技术之探讨[J].电路板会刊,2003,1(19):59-65. |
| [18] | 黄正达 .硫酸铜电镀在填孔制程之应用[J].电路板会刊,2003,1(19):45-51. |
| [19] | J.J.Kelly;A.C.West .Leveling of 200 nm Features by Organic Additives[J].Electrochemical and solid-state letters,1999(11):561-563. |
| [20] | D. Josell;D. Wheeler;T. P. Moffat .Superconformal Electrodeposition in Vias[J].Electrochemical and solid-state letters,2002(4):C49-C52. |
| [21] | Landolt D .Current-voltage characteristics and impedance analysis of the twentieth century[J].Journal of the Electrochemical Society,2002,149(03):S9-S20. |
| [22] | James J. Kelly;Chunyan Tian;Alan C. West .Leveling and microstructural effects of additives for copper electrodeposition[J].Journal of the Electrochemical Society,1999(7):2540-2545. |
| [23] | Masanori Hayase;Munemasa Taketani;Koji Aizawa .Copper Bottom-up Deposition by Breakdown of PEG-Cl Inhibition[J].Electrochemical and solid-state letters,2002(10):C98-C101. |
| [24] | Frank A;Bard A J .The decomposition of the sulfonate additive sulfopropyl sulfonate in acid copper electroplating chemsitries[J].Journal of the Electrochemical Society,2003,150:C244-C250. |
| [25] | Jae Jeong Kim;Soo-Kil Kim;Yong Shik Kim .Catalytic behavior of 3-mercapto-1-propane sulfonic acid on Cu electrodeposition and its effect on Cu film properties for CMOS device metallization[J].Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry,2003(0):61-66. |
| [26] | Taephaisitphongse P;Cao Y;West A C .Electrochemical and fill studies of a multicomponent additive package for copper deposition[J].Journal of the Electrochemical Society,2001,148:C492-C497. |
| [27] | Tan M;Harb J N .Additive behavior during copper electrodeposition in solutions containing Cl-,PEG and SPS[J].Journal of the Electrochemical Society,2003,150:C420-425. |
| [28] | Kang M;Gewirth A A .Influence of additives on copper electrodeposition on physical vapor deposited (PVD) copper substrates[J].Journal of the Electrochemical Society,2003,150:C426-434. |
| [29] | Dow W P;Huang H S .Interactions between brighterner and chloride ion on copper electroplating for laser-drilled via-hole filling[J].Electrochem and Solid-state Lett,2003,6(09):C134-C136. |
| [30] | Wei-Ping Dow;Her-Shu Huang;Ming-Yao Yen .Roles of Chloride Ion in Microvia Filling by Copper Electrodeposition[J].Journal of the Electrochemical Society,2005(2):C77-C88. |
| [31] | Kondo K;Matsumoto T;Watanabe K .Role of additives for copper damascene electrodeposition (Experimental study on inhibition and acceleration effects)[J].Journal of the Electrochemical Society,2004,151:C250-C255. |
| [32] | Kelly J J;West A C .Copper deposition in the presence of polyethylene glycol[J].Journal of the Electrochemical Society,1998,145:3472-3481. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%