采用电沉积法在导电玻璃上制备了ZnO薄膜,用X-射线衍射仪和扫描电子显微镜对其进行了表征.研究了各种因素对电沉积ZnO薄膜光催化还原Cr(Ⅵ)的影响.结果表明,空穴清除剂的存在是光催化还原Cr(Ⅵ)的重要条件;酸性介质中,Cr(Ⅵ)光催化还原率最高;Cr(Ⅵ)光催化还原率随Cr(Ⅵ)浓度的减小而增加;NO3 、SO42-和Ni2+等共存离子明显抑制了Cr(Ⅵ)的还原;而Cu2+则有着显著的促进作用.在pH=4.0和c(柠檬酸)为1.2mmol/L的条件下,经过60min的反应后,0.1mmol/LCr(Ⅵ)在ZnO薄膜上的光催化还原率达到96%.
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