以三氯甲基硅烷(MTS)为原料,在无水蒸气和有水蒸气加入的条件下采用化学气相沉积(CVD)法制备出SiC块体材料.在950～1200 ℃的范围内,水蒸气在水温20～80℃时由Ar鼓泡引入反应器中进行沉积,得到的产物基本属β-SiC,其中混有少量的二氧化硅.结果表明,无水蒸气时SiC的沉积速率随沉积温度升高而略有升高;通入水蒸气后SiC的沉积速率有所提高,当水蒸气的引入温度为20℃、沉积温度为1050℃时,沉积速率最大达到0.9mm/h;随水蒸气引入量的增加,SiC的沉积速率呈降低趋势.对沉积反应的机理进行了初步分析.
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