采用Sol-Gel工艺制备了Si基Bi4Ti3O12铁电薄膜.研究了退火温度对Si基Bi4Ti3O12薄膜晶相结构、晶粒尺寸及薄膜表面形貌的影响.研究表明,退火温度低于450℃时Bi4Ti3O12薄膜为非晶状态,退火温度在550～850℃范围时均为多晶薄膜,而且随退火温度升高,Bi4Ti3O12薄膜更趋向于沿c轴取向的生长;而晶粒尺寸及薄膜粗糙度随退火温度升高而增大,但在较高温度下增长速度趋缓.
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