氧化物辅助生长机理是近年来在合成硅纳米线的过程中发展起来的一种研究一维纳米材料生长的机理,根据此机理已经制备出了多种一维纳米材料.介绍了氧化物辅助生长机理及其根据此机理制备硅纳米线的制备方法,载气、压力及原料等不同条件对合成硅纳米线的影响等进展情况,并对其发展作了展望.
参考文献
| [1] | Namatsu H.;Nagase M.;Kurihara K.;Horiguchi S. .FABRICATION OF ONE-DIMENSIONAL NANOWIRE STRUCTURES UTILIZING CRYSTALLOGRAPHIC ORIENTATION IN SILICON AND THEIR CONDUCTANCE CHARACTERISTICS[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1997(5):1688-1696. |
| [2] | Ali D;AHMED H .Coulomb blockade in a silicon tunnel junction device[J].Applied Physics Letters,1994,64(16):2119-2120. |
| [3] | Leobandung E;GUO L;WANG Y et al.Observation of quantum effects and coulomb blockade in silicon quantum-dot transistors at temperature over 100K[J].Applied Physics Letters,1995,67(07):938-940. |
| [4] | Liu H I;BIEGELSEN D K;JOHNSON N M et al.Self-limiting oxidation of Si nanowires[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1993,11(06):2532-2537. |
| [5] | Ono T;Saitoh H;Esashi M .Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy[J].Applied physics letters,1997(14):1852-1854. |
| [6] | Morales A M;LIEBER C M .A laser ablation method for the synthesis of crystalline semiconductor nanowires[J].Science,1998,279:208-211. |
| [7] | Tang Y H;ZHANG Y F;LEE C S et al.Large scale synthesis of silicon nanowires by laser ablation[J].Materials Research Society Symposium Proceedings,1998,526:73-77. |
| [8] | S. Shingubara;O. Okino;Y. Sayama;H. Sakaue;T. Takahagi .Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum[J].Solid-State Electronics,1999(6):1143-1146. |
| [9] | Lu X M;HANRATH T;JOHNSTON K P et al.Growth of single crystal silicon nanowires in supercritical solution from tethered gold particles on a silicon substrate[J].Nano Letters,2003,3(01):93-99. |
| [10] | 唐元洪 .硅纳米线及相关纳米线的制备与表征[D].香港:香港城市大学,2000. |
| [11] | y.h.tang;y.f.zhang;n.wang .Si nanowires synthesized from silicon monoxide by laser ablation[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2001(1):317-321. |
| [12] | S. T. Lee;N. Wang;Y. F. Zhang .Oxide-Assisted Semiconductor Nanowire Growth[J].MRS bulletin,1999(8):36-42. |
| [13] | S.T.Lee;Y.F.Zhang .Semiconductor nanowires from oxides[J].Journal of Materials Research,1999(12):4503-4507. |
| [14] | BUFFAT P .Size effect on the melting temperature of gold particles[J].Physical Review A,1976,13(06):2287-2298. |
| [15] | Wang N.;Zhang YF.;Lee CS.;Lee ST.;Tang YH. .Nucleation and growth of Si nanowires from silicon oxide[J].Physical Review.B.Condensed Matter,1998(24):R16024-R16026. |
| [16] | Zhang YF.;Wang N.;Yu DP.;Lee CS.;Bello I.;Lee ST.;Tang YH. .Silicon nanowires prepared by laser ablation at high temperature[J].Applied physics letters,1998(15):1835-1837. |
| [17] | Tang Y H;ZHANG Y F;WANG N et al.Morphology of Si nanowires synthesized by high-temperature laser ablation[J].Journal of Applied Physics,1999,85(11):7981-7983. |
| [18] | Wang N.;Tang YH.;Lee CS.;Lee ST.;Zhang YF. .SiO2-enhanced synthesis of Si nanowires by laser ablation[J].Applied physics letters,1998(26):3902-3904. |
| [19] | Y. F. Zhang;Y. H. Tang;H. Y. Peng .Diameter modification of silicon nanowires by ambient gas[J].Applied physics letters,1999(13):1842-1844. |
| [20] | Zhang YF.;Lam C.;Wang N.;Lee CS.;Bello I.;Lee ST.;Tang YH. .Bulk-quantity Si nanowires synthesized by SiO sublimation[J].Journal of Crystal Growth,2000(1/2):115-118. |
| [21] | Y. H. Tang;Y. F. Zhang;H. Y. Peng;N. Wang;C. S. Lee;S. T. Lee .Si nanowires synthesized by laser ablation of mixed SiC and SiO_2 powders[J].Chemical Physics Letters,1999(1/2):16-20. |
| [22] | Li JC.;Lee CS.;Lee ST. .Direct growth of beta-SiC nanowires from SiOx thin films deposited on Si (100) substrate[J].Chemical Physics Letters,2002(1/2):147-150. |
| [23] | Y. H. Tang;N. Wang;Y. F. Zhang;C. S. Lee;I. Bello;S. T. Lee .Synthesis and characterization of amorphous carbon nanowires[J].Applied physics letters,1999(19):2921-2923. |
| [24] | S. T. Lee;N. Wang;C. S. Lee .Semiconductor nanowires: synthesis, structure and properties[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2000(1):16-23. |
| [25] | Zhang Y F;TANG Y H;WANG N et al.Germanium nanowires sheathed with an oxide layer[J].Physical Review B,2001,61(07):4518-4521. |
| [26] | Y. H. Tang;Y. F. Zhang;N. Wang;I. Bello;C. S. Lee;S. T. Lee .Germanium dioxide whiskers synthesized by laser ablation[J].Applied physics letters,1999(25):3824-3826. |
| [27] | Shi WS.;Xu L.;Wang N.;Tang YH.;Lee ST.;Peng HY. .Coaxial three-layer nanocables synthesized by combining laser ablation and thermal evaporation[J].Advanced Materials,2000(24):1927-1930. |
| [28] | Shi WS.;Wang N.;Lee CS.;Lee ST.;Zheng YF. .Microstructures of gallium nitride nanowires synthesized by oxide-assisted method[J].Chemical Physics Letters,2001(5-6):377-380. |
| [29] | Ma DDD.;Lee CS.;Au FCK.;Tong SY.;Lee ST. .Small-diameter silicon nanowire surfaces[J].Science,2003(5614):1874-1877. |
| [30] | Zhou XT.;Hu JQ.;Li CP.;Ma DDD.;Lee CS.;Lee ST. .Silicon nanowires as chemical sensors[J].Chemical Physics Letters,2003(1/2):220-224. |
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