化学气相沉积法制备SiC/SiO2梯度复合涂层的热力学分析

材料工程, 2008, (6): 68-71. doi: 10.3969/j.issn.1001-4381.2008.06.018

化学气相沉积法制备SiC/SiO2梯度复合涂层的热力学分析

付志强 ^1, , 周家斌 ^2, , 王成彪 ^3, , 唐春和 ^4, , 梁彤祥 ^5, , 赵宏生 ^6, , ^7,

1.中国地质大学,北京,工程技术学院,北京,100083

2.中国地质大学(北京)工程技术学院,北京,100083;广西壮族自治区建设厅,南宁,530028

3.中国地质大学(北京)工程技术学院,北京,100083

4.清华大学,核能与新能源技术研究院,北京,102201

5.清华大学,核能与新能源技术研究院,北京,102201

6.清华大学,核能与新能源技术研究院,北京,102201

7.DEN/DTN/STPA/LPC/CEA/Cadarache, 13108 Saint Paul Lez Durance, France

基金项目: 科学钻探国家专业实验室开放课题(NLSD200605) 中国地质大学(北京)校科研和教改项目(200503)

关键词： SiC/SiO2复合涂层 , 化学气相沉积 , 热力学分析

Thermodynamic Analysis of Chemical Vapor Deposition Process for SiC/SiO2 Graded Composite Coating

SiC/SiO2复合涂层是显著改善先进高温气冷用石墨抗氧化性能的一个理想涂层体系,但目前其优化的化学气相沉积工艺还未见诸报道.本研究利用HSC-CHEMISTRY 4.1分析了化学气相沉积工艺对制备的SiC/SiO2复合涂层的影响.分析结果表明:载气中加入足够的氢气对制备不含杂质的SiC/SiO2复合涂层很有必要;合适的沉积温度为1100～1200℃;最佳反应物浓度为:SiCl4摩尔分数为1%～2%,沉积SiC涂层时CH4与SiCl4的摩尔比为1,沉积SiO2涂层时水蒸气与SiCl4摩尔比为2,通过逐渐改变CVD气氛中的水蒸气与CH4的比例来沉积SiC/SiO2梯度过渡层.

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