用等离子体增强化学气相沉积(PECVD)的方法,以硅烷为源气体,在玻璃基片上沉积得到多孔的氧化硅薄膜.将反应过程中加在沉积区域的脉冲负偏压固定在-300V,当占空比从0.162增大到0.864时,薄膜样品的结构、形貌均不相同.拉曼光谱显示,位于480cm-1附近的峰在低占空比条件下存在,但是当占空比升高到0.702时该峰基本消失.位于560cm-1附近的峰则随着占空比的继续升高而增强,并出现蓝移,这说明薄膜样品中的非晶硅在占空比升高时消失,氧化硅所占比例不断增加,同时颗粒变小.扫描电镜照片也表明,组成多孔氧化硅薄膜的颗粒在占空比增大时变得细腻并且薄膜整体变得蓬松多孔.
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