恒塑性应变幅循环加载条件下,单滑移取向的Cu单晶体出现驻留带(Persistent Slip Bands,PSBs).在铜的(0.3～0.5)TmK中温回复区内,对疲劳Cu单晶进行不同温度和时间的真空保温处理,观察PSBs结构在热激活条件下的变化及材料的寿命估计.结果显示,中温回复过程中,由于弹性力、渗透力与林位错阻碍力的交互作用促使PSBs中的位错通过空位的放出和湮灭而运动,并使PSBs的位错墙由弯曲到变细最后分段消失,位错密度快速下降.中温回复后材料寿命得到延长.
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