采用同步辐射白光貌相术研究合成金刚石单晶体中的晶体缺陷,观察到晶体中存在籽晶,籽晶周围存在着大量的位错线.位错线起源于籽晶表面,终止于晶体表面.计算了位错束的空间走向和位错密度.分析了晶体的生长阶段和影响晶体缺陷的主要因素,指出通过减少籽晶表面的缺陷,保持生长条件的稳定,能够有效地降低合成金刚石晶体中缺陷的密度,提高合成金刚石晶体的完整性.
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