采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在高功率密度、高反应气压和低衬底温度下制备出不同氢稀释比RH的硅薄膜.高分辨透射电镜(High-Resolution Transmission Electron Microscopy,HRTEM)图像与拉曼谱显示在较高氢稀释比条件下生长的薄膜为纳米硅(nanocrystalline silicon,nc-Si)薄膜,纳米硅颗粒尺寸约为3～5nm.对不同氢稀释比下纳米硅薄膜光学带隙的变化趋势进行了研究.结果表明:随着氢稀释比的增加,纳米硅薄膜的光学带隙逐渐增加.提出采用双纳米硅p层结构改善非晶硅太阳能电池,发现双纳米硅p层电池效率比单纳米硅p层的电池效率提高了17%.
参考文献
| [1] | Saleh R.;Nickel NH. .Raman spectroscopy of B-doped microcrystalline silicon films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):266-269. |
| [2] | GUHA S;YANG J;NATH P et al.Enhancement of open circuit voltage in high-efficiency amorphous-silicon alloy solar-cells[J].Applied Physics Letters,1986,49(04):218-219. |
| [3] | Hu ZH;Liao XB;Diao HW;Cai Y;Zhang SB;Fortunato E;Martins R .Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2006(9/20):1900-1903. |
| [4] | Kitao J.;Yoshida N.;Kasuya Y.;Nishio M.;Sakamoto T.;Itoh T.;Nonomura S.;Nitta S.;Harada H. .Absorption coefficient spectra of mu c-Si in the low-energy region 0.4-1.2 eV[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):245-251. |
| [5] | HE Y L;YIN C Z;CHENG G X et al.The structure and properties of nanosize crystalline silicon films[J].Journal of Applied Physics,1994,75(02):797-803. |
| [6] | TAUC J;GRIGOROV R;VANCU A et al.Optical properties and electronic structure of amorphous germanium[J].Physical Status Solidi,1966,15(02):627-631. |
| [7] | KIM S K;PARK K C .Effect of H2 dilution on the growth of low temperature as-deposited poly-Si films using SiF4/SiH4/H2 plasma[J].Journal of Applied Physics,1995,77(10):5115-5118. |
| [8] | KIM W Y;TASAKI H;KONAGAI M et al.Use of a carbonalloyed graded-band-gap layer at the p/i-interface to improve the photocharacteristics of amorphous-silicon alloyed p-i-n solar-cells prepared by photochemical vapor-deposition[J].Journal of Applied Physics,1987,61(08):3071-3076. |
| [9] | Ogawa S;Okabe M;Itoh T;Yoshida N;Nonomura S .Amorphous Si1-xCx : H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(5):758-760. |
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