研究了室温注氘纯钒在电子辐照下位错环的变化.纯钒室温注氘后分别在500,550℃通过超高压透射电子显微镜(HVEM)观察分析了在电子辐照下的微观结构变化.结果表明:500℃电子辐照时,位错环没有明显的变化；在550℃时效后形成的位错环尺寸比500℃略有增加,在550℃继续进行电子辐照,位错环在尺寸和密度上同样没有变化.与纯铁相比,纯钒中的缺陷团簇在辐照下的稳定性更高.
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