采用射频磁控溅射工艺、以氧化锌铝陶瓷靶为靶材制备透明导电ZAO薄膜,系统研究了各工艺参数,如工作气压、温度、射频功率和退火条件对其结构和光电特性的影响.在纯氩气中且补底温度为300℃时制备的ZAO薄膜经热处理后电阻率降至8.7×10-4Ωcm,可见光透过率在85%以上.X射线衍射谱扫描电镜照片表明ZAO晶粒具有六角纤锌矿结构且呈c轴择优取向,晶粒垂直于衬底方向柱状生长.
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