制备以TPB3TSi为发光材料的黄色发光器件.实验表明,当TPB3 TSi薄膜厚度为20nm时,器件的发光谱峰位于580nm,其双层和3层器件的最大亮度分别达到7507.6和1385cd/m2(17V电压下),但是器件的电流较大,造成了器件的发光效率偏低,其原因是TPB3TSi材料本身的电荷陷阱(所谓陷阱指的是拥有比母体更容易接受电子或者空穴的能级的位置)较多,荧光效率低,从而降低了器件的效率.
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