MnSe/Ti薄膜电沉积制备及其表征

功能材料, 2013, 44(11): 1635-1641. doi: 10.3969/j.issn.1001-9731.2013.11.026

MnSe/Ti薄膜电沉积制备及其表征

李文坡 ^1, , 李春焕 ^2, , 马斯 ^3, , 谢昭明 ^4, , 张胜涛 ^5,

1.重庆大学化学化工学院,重庆400044

2.重庆大学化学化工学院,重庆400044

3.重庆大学化学化工学院,重庆400044

4.重庆大学化学化工学院,重庆400044

5.重庆大学化学化工学院,重庆400044

基金项目: 国家青年科学基金资助项目(21003163) 重庆大学大型仪器开放基金资助项目(2011063009)

关键词： MnSe , 循环伏安法 , 恒电位 , 共沉积

Study on characterization and electrodeposition of MnSe/Ti thin films

LI Wen-po ^1, , LI Chun-huan ^2, , MA Si ^3, , XIE Zhao-ming ^4, , ZHANG Sheng-tao ^5,

1.重庆大学化学化工学院,重庆400044

2.重庆大学化学化工学院,重庆400044

3.重庆大学化学化工学院,重庆400044

4.重庆大学化学化工学院,重庆400044

5.重庆大学化学化工学院,重庆400044

Keywords： MnSe , cyclic voltammogram , potentiostatic , co-deposition

在钛电极表面上,采用电化学方法在0.lmol/L MnSO4和0.002mol/L SeO2的溶液中沉积硒化锰(MnSe)薄膜.循环伏安实验结果表明在-1.60～-1.70V电位范围易发生Mn和Se共沉积.然后采用XRD、SEM及EDS等研究沉积电位分别在-1.55、-1.60、-1.65和-1.70V时得到薄膜的特性,结果表明上述选定的电位不影响沉积层立方结构优先沿(200)晶面向；不同电位对沉积层形貌及化学计量数有显著影响.控制电位可以沉积得到不同特征的MnSe薄膜.

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