以Ⅰb型(100)取向高温高压(HPHT)单晶金刚石为基底、H2-CH4-CO2混合气为反应气源,利用10kW、2.45GHz不锈钢谐振腔式微波等离子体化学气相沉积(MPCVD)装置进行金刚石同质外延生长.通过光学显微镜表征外延生长金刚石的表面形貌;Raman光谱表征金刚石的结晶质量;螺旋测微仪测厚再计算生长速率,着重探讨工艺因素中氧碳比对同质外延金刚石生长速率、表面形貌、金刚石结晶质量的影响.结果表明随着氧碳比的增加,金刚石生长模式由二维形核模式转变为台阶流模式,结晶质量提高,生长速率变慢;在微波功率7.8kW、CH4浓度(与H2的比例)8％、气压18kPa、基底温度1080℃条件下,氧碳比为0.8时,金刚石结晶质量好且生长速率高(达16μm/h).反应气源中引入合适比例的CO2是获得高的生长速率同时有效改善同质外延单晶金刚石结晶质量的有效方法.
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