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通过磁控溅射镀膜法制备了不同厚度的钴薄膜,利用飞秒激光泵浦探测技术研究了衬底材料分别为单晶硅、K9玻璃以及 Tou 玻璃的钴薄膜内部的超快动力学变化。实验结果表明,当用80mW的泵浦激光脉冲加热不同厚度、不同衬底的钴膜时,电子的加热时间不变,均为0.1344ps;而电子的热化时间则会发生变化,且与薄膜厚度和衬底材料均有关。在电-声子发生非平衡弛豫阶段,对于不同衬底材料的钴膜,其瞬态反射率曲线的变化趋势也不同。

Cobalt films were deposited on silicon substrates,K9 glass substrates and Tou glass substrates,sepa-rately,by magnetron sputtering technique.The ultrafast dynamics of Co films were studied by using femtosec-ond laser pump-probe technology.The results show that,when the pumped power of femtosecond laser pulse was 80mW,and both the substrates and the thickness of cobalt films were not the same,the heating time of electrons in films was equal,was 0.1344ps;however the thermalized time of electrons in films was diverse,it was relative to the thickness and the substrates of Co films.Besides,when the substrates of Co films were changed,during the nonequilibrium lasting time of electrons,the transient reflectance curves were different.

参考文献

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