通过观察和分析CdZnTe晶体中富Te和富Cd沉淀物在红外透射显微镜下的形貌特征,从实验上证实在正四面体或八面体结构的富Te沉淀物内部存在空洞.分析表明,和正四面体沉淀物相邻的CdZnTe材料表面为(111)B面,构成八面体的另外4个面为(111)A面,(111)B面为表面能密度最低的慢生长面.结合化学腐蚀的观察结果发现,红外透射显微镜下呈星状结构的富Cd沉淀物由中心区沉淀物和外围高密度位错集聚区构成,中心区沉淀物大多为不规则形状.通过分析〈111〉和〈110〉晶向上富Cd沉淀物的形貌特征,确定了星状结构的延伸方向为〈211〉晶向,高密度位错集聚区的大小比沉淀物尺寸大出数倍.对沉淀物与周边材料的作用机理也进行了分析.
参考文献
[1] | Rudolph P.;Schentke I.;Grochocki A.;Engel A. .DISTRIBUTION AND GENESIS OF INCLUSIONS IN CDTE AND (CD,ZN)TE SINGLE CRYSTALS GROWN BY THE BRIDGMAN METHOD AND BY THE TRAVELLING HEATER METHOD[J].Journal of Crystal Growth,1995(3/4):297-304. |
[2] | Wada M;Suzuki J .Characterization of Te precipitates in CdTe crystals[J].Japanese Journal of Applied Physics,1988,27(06):972-975. |
[3] | Barz RU.;Gille P. .THE MECHANISM OF INCLUSION FORMATION DURING CRYSTAL GROWTH BY THE TRAVELLING HEATER METHOD[J].Journal of Crystal Growth,1995(3/4):196-200. |
[4] | Min, J.;Liang, X.;Chen, J.;Wang, D.;Li, H.;Zhang, J. .Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2012(7):1003-1006. |
[5] | Brion H G;Mewes C;Hahn I et al.Infrared contrast of inclusions in CdTe[J].Journal of Crystal Growth,1993,134(3-4):281-286. |
[6] | Jayatirtha H N;Henderson D O;Burger A et al.Study of tellurium precipitates in CdTe crystals[J].Applied Physics Letters,1993,62(06):573-575. |
[7] | Shen J;Aidun D K;Regel L et al.Characterization of precipitates in CdTe and Cd1-xZnxTe grown by vertical Bridgman-Stockbarger technique[J].Journal of Crystal Growth,1993,132(1-2):250-260. |
[8] | F.F. Sheng;X.P. Cui;S.W. Sun;J.R. Yang .Etch pits of precipitates in CdZnTe crystals on (111) B surface[J].Journal of Crystal Growth,2012(1):76-80. |
[9] | E. BELAS;M. BUGAR;R. GRILL;J. FRANC;P. MORAVEC;P. HLIDEK;P. HOSCHL .Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing[J].Journal of Electronic Materials,2008(9):1212-1218. |
[10] | J.H. Greenberg .P-T-X phase equilibrium and vapor pressure scanning of non-stoichiometry in the Cd-Zn-Te system[J].Progress in Crystal Growth and Characterization of Materials,2003(2/3):196-238. |
[11] | W.J. EVERSON;C.K. ARD;J.L. SEPICH;B.E. DEAN;G.T. NEUGEBAUER;H.F. SCHAAKE .Etch Pit Characterization of CdTe and CdZnTe Substrates for Use in Mercury Cadmium Telluride Epitaxy[J].Journal of Electronic Materials,1995(5):505-510. |
[12] | Yadong Xu;Wanqi Jie;Tao Wang .Morphology evolution of micron-scale secondary phases in CdZnTe crystals grown by vertical Bridgman method[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2011(5):2338-2342. |
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