采用光诱导液相沉积(LIP)的方法制备了Ni、Cu 薄膜,并进一步讨论了沉积温度等相关因素对薄膜成分与形貌的影响.采用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)、四探针测试仪等分别对薄膜的成分、形貌、电阻率、非均匀性等进行表征.结果显示,制备的 Cu 膜电阻率为1．87×10-8Ω??m,非均匀性为2．64％.此外,将制备的 Ni/Cu 工艺应用于制备晶硅电池的栅线电极,用 I-V 测试仪测试电池参数,填充因子高达77．8％.
Nickel films and copper films were fabricated by the method of light-induced plating (LIP),and the influence of some technological factors (deposition temperature,deposition time ect.)on films were studied.To characterize the composition,morphology,resistivity and ununiformity of the films,X-ray diffraction (XRD), scanning electron microscopy (SEM)and four-probe tester were used.The results indicated that the copper film’s resistivity was 1.87×10 -8 Ω??m and the ununiformity was 2.64%.What’s more,in this paper,Ni/Cu films deposition technique was also introduced in developing the crystalline silicon solar cell.Then the electrical parameters of solar cell were investigated by measuring light I-V solar cell measurements,and FF was 77.8%.
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