以多壁碳纳米管(multi-walled carbon nanotubes,MWCNTs)和α-六噻吩(α-sexithiophene,α-6T)双层膜作为有源层,二氧化硅(SiO2)为绝缘层,钛/金(Ti/Au)作为电极,制备了沟道宽长比为640的有机薄膜晶体管(organic thin-film transistors,OT-FT)气体传感器。测试了该传感器对痕量二氧化氮(NO2)气体的实时响应特性,并分析了 NO2气体对OTFT传感器阈值电压、载流子迁移率等多参数的影响。研究结果表明,基于 MWCNTs/α-6T 的 OTFT器件有较好的电学特性,载流子迁移率为3.0×10-2 cm2/V·s;OTFT传感器对 NO2气体具有较高的响应率,响应和恢复时间短,能检测(0.2~1)×10-6的痕量NO2气体,且具有良好的重复性;同时可以利用阈值电压和载流子迁移率等多参数来表征响应结果。形貌分析结果表明双层敏感膜的特殊形貌有利于提高器件的气敏性能。
The multi-walled carbon nanotubes (MWCNTs)andα-sexithiophene (α-6T)bilayer were taken as the active layer,and silicon dioxide (SiO2 )was used as the insulating layer.Titanium/aurum (Ti/Au)were made as the electrode for the prepared OTFT gas sensor,of which the ratio of channel width to length was 640.The real-time response characteristics of the sensor exposed to nitrogen dioxide (NO2 )were tested,and the effect of NO2 on the multi-parameters of the OTFT sensor,such as threshold voltage and carrier mobility,was ana-lyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer performed better electrical properties,and the carrier mobility reached 3.0×10-2 cm2/V·s.The OTFT gas sensor showed the high re-sponse when exposed to NO2 ,and the time of response and recovery were short.The trace (0.2-1)×10-6 NO2 were detected and the sensor also had the good repeatability.It was feasible to take the multi-parameters to present the gas response results.Morphology analysis showed that the special feature of the bilayer was helpful for improving the gas sensitivity.
参考文献
[1] | Drury CJ.;Hart CM.;Matters M.;de Leeuw DM.;Mutsaers CMJ. .Low-cost all-polymer integrated circuits[J].Applied physics letters,1998(1):108-110. |
[2] | Hagen Klauk;David J. Gundlach;Jonathan A. Nichols;Thomas N. Jackson .Pentacene organic thin-film transistors for circuit and display applications[J].IEEE Transactions on Electron Devices,1999(6):1258-1263. |
[3] | C. D. Sheraw;L. Zhou;J. R. Huang;D. J. Gundlach;T. N. Jackson;M. G. Kane;I. G. Hill;M. S. Hammond;J. Campi;B. K. Greening;J. Francl;J. West .Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates[J].Applied physics letters,2002(6):1088-1090. |
[4] | Crone B;Dodabalapur A;Lin Y Y et al.Large-scale complementary integrated circuits based on organic tran-sistors[J].NATURE,2000,403:521-523. |
[5] | Koezuka H;Tsumura A;Ando T .Field-effect transistor with polythiophene thin film[J].Synthetic Metals,1987,18:699-704. |
[6] | Schon J H;Kloc Ch;Dodabalapur A et al.An organic solid state injection laser[J].SCIENCE,2000,289:599-601. |
[7] | Schon,JH;Dodabalapur,A;Bao,Z;Kloc,C;Schenker,O;Batlogg,B .Gate-induced superconductivity in a solution-processed organic polymer film.[J].Nature,2001(6825610):189-192. |
[8] | Laurs H;Heiland G .Electrical and optical properties of phthalocyanine films[J].THIN SOLID FILMS,1987,149:129-142. |
[9] | Torsi L.;Sabbatini L.;Zambonin PG.;Dodabalapur A. .Multi-parameter gas sensors based on organic thin-film-transistors[J].Sensors and Actuators, B. Chemical,2000(3):312-316. |
[10] | Fukuda H;Ise M;Kogure T;Takano N .Gas sensors based on poly-3-hexylthiophene thin-film transistors[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(0):441-444. |
[11] | Park J;Royer J E;Colesniuc C N et al.Ambient in-duced degradation and chemically activated recovery in copper phthalocyanine thin film transistors[J].APPLIED PHYSICS,2009,106:034505. |
[12] | Wondmagegn W;Pieper R .Simulation of top-contact pen-tacene thin film transistor[J].Computer Electron,2009,8:19-24. |
[13] | Crone B K;Dodabalapur A;Sarpeshkar R et al.Or-ganic micro-and nano-crystal field-effect transistors[J].APPLIED PHYSICS,2002,91:10140-10146. |
[14] | Horowitz G.;Hajlaoui R.;Hajlaoui ME. .Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors[J].Journal of Applied Physics,2000(9 Pt.1):4456-4463. |
[15] | Horowitz G;Fichou D;Peng X et al.A field-effect transistor based on conj ugated alpha-sexithienyl[J].Solid State communications,1989,72(04):381-384. |
[16] | Dresselhaus M S;Avouris P .Introduction to carbon materials research[J].APPLIED PHYSICS,2001,80:1-9. |
[17] | Kong J;Franklin N R;Zhou C et al.Nanotube molec-ular wires as chemical sensors[J].SCIENCE,2000,287:622-625. |
[18] | Lozzi L;Picozzi S;Armentano I et al.Soft-X-ray pho-toemission spectroscopy and ab initio studies on the ad-sorption of NO2 molecules on defective multi-walled car-bon nanotubes[J].Chemical Physics,2005,123:034702. |
[19] | 严剑飞,吴志明,太惠玲,李娴,付嵩琦.有机薄膜晶体管钛/金电极的刻蚀工艺研究[J].功能材料,2010(z2):361-364. |
[20] | Baibarac M;Lapkowski M;Pron A et al.SERS spec-tra of poly(3-hexylthiophene)in oxidized and unoxidized states[J].Raman Spectrosc,1998,29:825-832. |
[21] | Fukuda H.;Nomura S.;Kasama K. .Highly sensitive MISFET sensors with porous Pt-SnO2 gate electrode for CO gas sensing applications[J].Sensors and Actuators, B. Chemical,2000(1/3):163-168. |
[22] | 李娴,蒋亚东,谢光忠,太惠玲.α-六噻吩OTFT器件痕量NO2气体传感器的制备及特性研究[J].材料导报,2012(22):16-19,34. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%