研究了电子束注入对多孔硅吸杂效果的影响。采用电化学腐蚀方法利用双电解槽在单晶硅片上制备多孔硅。电子束注入以后多孔硅的微观形貌发生了变化，通过3 min的电子束注入处理，硅片的电阻率发生了明显的改变，大于相同条件下经过快速热处理的硅片的电阻率，这充分证明了电子束注入有热效应与电场效应的双重作用，对去除杂质B有一定的效果。电子束注入时间对去除杂质的效果有一定的影响。
Study on the effect of porous silicon gettering by electron beam inj ection was conducted.Preparation of porous silicon was carried out by electrochemical etching in both electrobath.The morphology of porous sili-con changed after electron beam inj ection.Through 3 min gettering treatment,the resistivity changed signifi-cantly and greater than the resistivity of the silicon wafers from rapid heat treatment under the same condition, which fully improves that electron beam inj ection play a dual role of thermal effects and electrical effects,and electron beam inj ection have a certain effect on the removal of impurities.The time of the electron beam inj ec-tion shows certain effect on the removal effectiveness of boron.
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